GaN Flying Capacitor Multilevel Converter Characterization
GaN Flying Capacitor Multilevel Converter Characterization
The ongoing development of power electronics converters is pushing towards new semiconductor technologies. Currently, wide bandgap (WBG) semiconductors are quite promising, being able to greatly reduce the power losses of the converters. Among WBG, gallium nitride (GaN) devices are particularly promising for high switching frequency applications (> 100 kHz), leveraging their low switching losses.
The goal of this thesis is the thermal and power loss characterization of a 100 kVA flying capacitor inverter using 650V GaN transistors.
Further information in the attached document.
Contacts:
Prof. Radu Bojoi (radu.bojoi@polito.it)
Fabio Mandrile (fabio.mandrile@polito.it)
Enrico Vico (enrico.vico@polito.it)