Industry seminar: GaN Power Devices: Present and Future

Presenter: Davide Bisi, Transphorm Inc, Goleta (USA)

Politecnico di Torino, Dipartimento Energia, Sala Multimedia (second floor, door DENERG 3)

The Power Electronics Innovation Center invites you to be part of the GaN revolution. Thanks to its superior switching properties, the Gallium-Nitride (GaN) is penetrating several power applications, including fast chargers, power supplies, solar inverters, and automotive. During this seminar, Dr. Davide Bisi will review GaN technologies available today and in development for tomorrow. Industry trends and GaN adoption will be discussed.  

You will learn about continuous innovation towards high power, including 1200-V rating, high-current chips, short-circuit survivability, and bi-directional operations.

More details can be found here PoliTo_PEIC_Seminar - Transphorm - Bisi (610,85 kB)