GaN Cascode Device Characterization

GaN Cascode Device Characterization
The ongoing development of power electronics converters is pushing towards new semiconductor technologies. Currently, wide bandgap (WBG) semiconductors are quite promising, being able to greatly reduce the power losses of the converters. Among WBG, gallium nitride (GaN) devices are particularly promising for high switching frequency applications (> 100 kHz), leveraging their low switching losses.
The goal of this thesis is the loss and behavioral characterization of 650V GaN transistors. This is done by SPICE simulations and experimentally using dedicated double pulse test equipment.

Further information in the attached document.

GaN_Transphorm application/pdf (118.75 kB)

Contacts:
Prof. Radu Bojoi (radu.bojoi@polito.it)
Fabio Mandrile (fabio.mandrile@polito.it)
Enrico Vico (enrico.vico@polito.it)